产品介绍 Batop SAM 可饱和吸收体 内容: 微芯片安装 工作原理 脉冲能量Ep 重复率frep 脉冲宽度tp 微芯片的主要特性取决于以下参数: 脉冲能量Ep 重复率frep 脉冲宽度tp 工作原理 可饱和吸收体(SAM)作为被动调Q开关。 对波长为1064nm的激光来说低强度非饱和SAM反射率在0.75-0.9的区域。激光晶体的连续泵浦上部将被填补直到获得足够大的自发辐射。然后SAM饱和,激光器发出一个强大的短脉冲。 在连续泵浦期间,发展重复,重复频率德国财务报告管理小组inceasing与泵浦功率密度接近线性关系。由于光能量的一部分是在SAM的吸收层消退,安排必须删除此芯片产生的热量。如果激光腔长度短,单模激光泵浦光斑直径小。 pulse energy Ep According to the well established formalism (Journal of the Optical Society of America B, Vol. 16, Issue 3, pp. 376-388, 1999) of passive Q-switched microchip laser the pulse energy Ep can be estimated as follows: with Fsat,L saturation fluence of the laser material Apump spot area in the resonator ΔRmodulation depth of the SAM T transmission of the output coupler Ansnon-saturable losses, mainly from SAM With typical values Fsat,L = 37.3 mJ/cm2, A = 1.3x10-5cm2 ( 40 μm spot diameter), ΔR = 0.1, T = 0.1, and loss = 0.05 the pulse energy can be estimated to Ep ~ 32 nJ. repetition rate frep The average output power Pav is proportional to the pump power. Therefore the repetition rate shows a linear behavior by changing the pump power according to: with ηs slope efficiency Pp pump power PP,th pump power threshold By changing the pump power PP repetition rates between 100 kHz and 2 MHz can be realized with a nearly constant pulse energy EP. Because the pulses start with spontaneous emission, the repetition rate shows a time jitter of about 1 %, increasing with decreasing pump power and rate. pulse duration tP The pulse duration tP in passive Q-switched lasers can be estimated by: with TR resonator round trip time ΔR modulation depth of the SAM n refractive index of the resonator material L resonator length c speed of light in vacuum. With a short laser crystal length L = 0.2 mm, refractive index n ~ 1.95, and a SAM modulation depth of ΔR = 0.1 the pulse duration is about 91 ps. |
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