Substrate specification: Orientation <100>, Dopant: Boron, Electrical: type P.
| 订货号 | 包装规格 |
| Sizes |
| 751-324-46 | 10mm x 10mm |
| 952-502-25 | 25.4mm x 25.4mm |
产品参数
| Class[类别] | Nanomaterials |
| Film Morphology[薄膜形态] | Continuous monolayer >95% |
| Monolayer Thickness[单层厚度] | 0.345nm |
| Sheet Resistance[薄片电阻率] | Av. <250-400 ohms/sq (after transfer) |
| Substrate[基底] | SiO2 (300nm)/Si Wafer (Standard) |
| Thickness[厚度] | 0.525mm |
| Transmittance[透光率] | >97% |
其他参数
公差
| 直径 | <100mm | ±1mm |
|---|
| ≥100mm | +2% / -1% |
| 厚度 | | ±20% |
|---|
| 长度 1 | <100mm | ±1mm |
|---|
| ≥100mm | +2% / -1% |
| 长度 2 | <100mm | ±1mm |
|---|
| ≥100mm | +2% / -1% |
