氮化钽

Tantalum nitride
CAS NO:12033-62-4
规格:99.5% (metals basis)
包装规格:10g,50g
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基本信息
应用
Tantalum nitride is used to create barrier or "glue" layers between copper, or other conductive metals, and dielectric insulator films such as thermal oxides. These films are deposited on top of silicon wafers during the manufacture of integrated circuits, to create thin film surface mount resistors and has other electronic applications.
备注
Stable under recommended storage conditions. Incompatible with oxidizing agents.
MDL
MFCD00049568
EINECS
234-788-4
分子式
TaN
分子量
194.95
熔点
3360°
灵敏度
Ambient temperatures.
形态
-325 Mesh Powder
溶解性
Insoluble in water.
安全信息
TSCA
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