五氧化二钽(V)

Tantalum(V) oxide
CAS NO:1314-61-0
规格:,≥99.5%,4N,AR,4N,99.99%
包装规格:10g,50g,250g,25g,100g,500g,10 G,50 G,25 G,100 G,1 EA,5g,5克,25克,100克,10mg,25mg,100mg
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产品价格
产品编号品牌纯度规格包装单位单价(元)现货
3060099Alfa Aesar99% (metals basis)10g690请咨询
3060099Alfa Aesar99% (metals basis)50g2590请咨询
3060099Alfa Aesar99% (metals basis)250g6830请咨询
3060100Alfa Aesar99% (metals basis)25g2510请咨询
3060100Alfa Aesar99% (metals basis)100g4320请咨询
3060101Alfa Aesar99% (metals basis)25g1230请咨询
3060101Alfa Aesar99% (metals basis)100g3220请咨询
3060101Alfa Aesar99% (metals basis)500g12930请咨询
3060102Alfa Aesar99% (metals basis)25g3150请咨询
3060102Alfa Aesar99% (metals basis)100g8600请咨询
3060103Alfa Aesar99% (metals basis)25g4970请咨询
3060103Alfa Aesar99% (metals basis)100g10910请咨询
3060103Alfa Aesar99% (metals basis)500g询价请咨询
3248713Sigma-Aldrich99% (metals basis)10 G1089请咨询
3248713Sigma-Aldrich99% (metals basis)50 G3250请咨询
3248714Sigma-Aldrich99% (metals basis)25 G989请咨询
3248714Sigma-Aldrich99% (metals basis)100 G3030请咨询
3248715Sigma-Aldrich99% (metals basis)25 G1360请咨询
3248716Sigma-Aldrich99% (metals basis)1 EA579请咨询
3466789翁江≥99.5%25g330请咨询
3466789翁江≥99.5%100g862请咨询
3466789翁江≥99.5%500g3020请咨询
3478501Alfa Aesar99% (metals basis)10g1390请咨询
3478501Alfa Aesar99% (metals basis)50g4440请咨询
34851724N5g561
3485233AR10g55
3487771Ryon4N,99.99%5克114请咨询
3487771Ryon4N,99.99%25克360请咨询
3487771Ryon4N,99.99%100克827请咨询
3541513Strem99% (metals basis)25g1200请咨询
3541513Strem99% (metals basis)100g4410请咨询
3557529Strem99% (metals basis)10g707请咨询
3557529Strem99% (metals basis)50g2780请咨询
4054655Alfa Aesar99% (metals basis)10mg6490请咨询
4054655Alfa Aesar99% (metals basis)25mg11690请咨询
4054655Alfa Aesar99% (metals basis)100mg28140请咨询
结构式
基本信息
应用
Tantalum(V) oxide is used in the production of capacitors, due to its high dielectric constant. These capacitors are used in automotive electronics, cell phones, thin film components and electronic circuitry. In addition, Tantalum(V) oxide has been utilized in the fabrication of the glass of photographic lenses. Due to its high biocompatibility and resistivity, it has attracted many biomedical applications. It is used in tantalum capacitors, resistive switching memories, high frequency CMOS (Complementary metal-oxide-semiconductors) integrated circuits and high-k dielectric for DRAM (Dynamic random-access memory) capacitor applications. It has been shown to improve corrosion resistance and cytocompatibility of titanium substrates.
备注
Tantalum(V) oxide reacts with strong bases and hydrofluoric acid.
MDL
MFCD00011254
EINECS
215-238-2
分子式
Ta2O5
分子量
441.89
熔点
1800°
密度
8.2
灵敏度
Ambient temperatures.
形态
Powder
溶解性
Insoluble in water, alcohol, mineral acids. Soluble in HFInsoluble in almost all organic solvents including alcohol and mineral acids. Solubility is negligible in water. Soluble in HF
Merck
14,9056
安全信息
TSCA
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