访问量: 8620   网址: www.chinadbs.com/show40041    在线留言  加入收藏
纳米压印标准模板
纳米压印标准模板图片
产地:德国
索取资料及报价
产品介绍

在科研中,很多用户需要用到光栅或点阵这些周期性的结构。有时用户不需要研究微纳米加工工艺,这样如果能花费低廉的价格买到这些成品将十分方便,只要接着从事后续的工作就可以了;有的用户自已拥有微纳米加工设备及经验,但纳米量级的尺寸要采用电子束曝光的方法来进行光刻,若有效面积超过1平方厘米,占机时间会很长,并需要调整电子束光刻及干法刻蚀工艺来优化成品。

鉴于此,我们向用户提供光栅及点阵的纳米结构成品。衬底材料为硅单晶,可广泛应用于各类科学研究。

产品类型:

  • 标准模板一

    ○ 光栅纳米结构模板 (线条+间距)

    ○ 二维纳米模板(矩形或六边形)

  • 标准模板二

    ○ 光栅结构

    ○ 柱状点阵模板

    ○ 孔阵模板

  • 2x2cm2模板

  • 四英寸模板

  • 六英寸模板

标准模板一

我们可提供纳米级微结构,衬底材料为硅单晶,广泛应用于科学研究。批量生产,且性价比高。

产品精度:

  • 线宽/深度:±15%

  • 周期精度:优于0.5%

  • 衬底宽度和高度误差:± 0.2 mm

  • 衬底厚度:0.675 ± 0.050 mm

具体规格如下表所示:

  • 光栅纳米结构模板 (线条+间距) Linear Nanostamps (line+space)

序号周期

沟槽深度

占空比

线宽

样片尺寸

1

139 nm

50 nm

50%

69.5 nm

12.5×12.5×0.7 mm

2

139 nm

50 nm

50%

69.5 nm

25×25×0.7 mm

3

278 nm④

110 nm

50%

139 nm

12.5×12.5×0.7 mm

4

416.6 nm

110 nm

50%

208 nm

12.5×12.5×0.7 mm

5

500 nm

multiple

44%

220 nm

8×8.3×0.7 mm

6

500 nm

multiple

60%

300 nm

8×8.3×0.7 mm

7

555.5 nm

110 nm

50%

278 nm

20×9×0.7 mm

8

555.5 nm

140 nm

50%

278 nm

20×9×0.7 mm

9

555.5 nm

110 nm

29%

158 nm

20×9×0.7 mm

10

555.5 nm

140 nm

29%

158 nm

20×9×0.7 mm

11

600 nm

multiple

43%

260 nm

8×8.3×0.7 mm

12

600 nm

multiple

55%

330 nm

8×8.3×0.7 mm

13

606 nm

190 nm

50%

303 nm

29×12×0.7 mm

14

606 nm④

190 nm

50%

303 nm

29×12×0.7 mm

15

606 nm

190 nm

50%

303 nm

29×24.2×0.7 mm

16

675 nm

170 nm

32%

218 nm

24×10×0.7 mm

17

675 nm

170 nm

32%

218 nm

24×30.4×0.7 mm

18

700 nm

multiple

47%

330 nm

8×8.3×0.7 mm

19

700 nm

multiple

55%

375 nm

8×8.3×0.7 mm

20

833.3 nm

200 nm

50%

416 nm

12.5×12.5×0.7 mm

21

833.3 nm

200 nm

50%

416 nm

25×25×0.7 mm

占空比表示线宽和周期的比率。

**个尺寸相当于沟槽的长度。

④scientific" grade offered at a discount. It has at least 80% of usable area. Up to 80/100 scratch/dig/particles and irregular substrate shape may present.

可定做更大尺寸

深度可做成150, 250 和 350 nm。

  • 二维纳米模板(矩形或六边形)2D nanostamps (rectangular and hexagonal lattice)

序号

周期

晶格类型

沟槽深度

特征宽度

衬底尺寸

1

500 nm

rect post

multiple

135 nm

8×8.3×0.7 mm

2

500 nm

rect post

multiple

210 nm

8×8.3×0.7mm

3

600 nm

rect post

multiple

195 nm

8×8.3×0.7mm

4

600 nm

rect post

multiple

275 nm

8×8.3×0.7mm

5

700 nm

rect post

multiple

260 nm

8×8.3×0.7mm

6

700 nm

rect post

multiple

350 nm

8×8.3×0.7mm

7

500 nm

hex post

multiple

165 nm

8×8.3×0.7mm

8

600 nm

hex post

multiple

165 nm

8×8.3×0.7mm

9

600 nm

hex post

multiple

240 nm

8×8.3×0.7mm

10

700 nm

hex post

multiple

220 nm

8×8.3×0.7mm

11

700 nm

hex post

multiple

290 nm

8×8.3×0.7mm

12

600 nm

hex hole

multiple

180 nm

8×8.3×0.7mm

13

700 nm

hex hole

multiple

200 nm

8×8.3×0.7mm

14

700 nm

hex hole

multiple

290 nm

8×8.3×0.7mm

深度可做成150, 250 和 350 nm

rect post:hex post:
hex hole:

标准模板二

我们可提供纳米级微结构,衬底材料为硅单晶,广泛应用于科学研究。批量生产,且性价比高。

产品精度:

  • 直径±10%

  • 线宽±10%

  • 高度/深度±15%

产品说明:

  • 硅片厚度:0.5mm(特殊情况另标注)

  • 模板尺寸:产品规格+/-0.2mm

  • 缺陷面积:<1%

具体规格如下表所示:

  • 光栅结构(周期,线宽,高度,有效面积,衬底尺寸)

Part NoDescriptionImage
Pattern 9

Line grating

Period: 70 nm

Width: 25nm

Height: 32 nm

Area: 21x 0.5 x 1.2 mm2

Substrate: Si 10 x 10 mm2

Pattern 10

Line grating

Period: 70 nm

Width: 25 nmor 35 nm

Height: 32nmor 40 nm

Area: 4x 0.5 x 1.2 mm2

Substrate: Si 20 x 20 mm2

Pattern 2

Line grating

Period: 300 nm

Width: 170 nm

Height: 210 nm

Area: 30 x 30 mm2

Substrate: Si 30 x 30 mm2

Pattern 23

Line arry

Period: 150 nm

Width: 75 nm

Height: 116 nm

Area:25 x25 mm2

Substrate:Si 30 x 30 mm2

  • 柱状点阵模板(周期,柱直径,高度,有效面积,衬底尺寸)

Part NoDescriptionImage
Pattern 1

Square pillar array

Period: 300 nm

Diameter: 145 nm

Height: 170 nm

Area: 14 x 14 mm2

Substrate: Si 14 x 14 mm2

Pattern 6

High-resolution pillar array

Period: 35 nmand 42 nm

Diameter: 15 - 20 nm

Height: 25nm

Area: each period >25x25 um2

Substrate: Si 12.5 x 12.5 mm2

Pattern 3

Hexagonal pillar array

Period: 600 nm

Diameter: 300 nm

Height: 310 nm

Area: 20 x 20 mm2

Substrate: Si 20 x 20 mm2

Pattern 15

Hexagonal pillar array

Period: 750 nm

Diameter: 325 nm

Height: 260 nm

Area: 25 x 25 mm2

Substrate: Si 25 x 25 mm2

Pattern 7

Hexagonal pillar array

Period: 1000 nm

Diameter: 400 nm

Height: 280 nm

Area: 20 x 20 mm2

Substrate: Si 26 x 26 mm2

Pattern 17

Hexagonal pillar array

Period: 1010 nm

Diameter: 470 nm

Height: 750 nm

Area: 25 x 25 mm2

Substrate: Si (0.7mm) 25 x 25 mm2

Pattern 20

Hexagonal pillar array

Period: 3000 nm

Diameter: 1800 nm

Height: 1200 nm

Area: 20 x 20 mm2

Substrate: Si 25 x 25 mm2

  • 孔阵模板(周期,孔直径,高度,有效面积,衬底尺寸)

Part NoDescriptionImage
Pattern 11

Square hole array

Period: 90 nm

Diameter: 45 nm

Height: 50 nm

Area: 4x 0.6 x 0.6 mm2

Chip size: 15 x 15 mm2

Pattern 13

Square hole array

Period: 300 nm

Diameter: 150 nm

Height: 300 nm

Area: 4 x 4 mm2

Chip size: 15 x 15 mm2

Substrate: Quartz (2.3 mm thick)

Pattern 24

Square hole array

Period: 350 nm

Diameter: 225 nm

Height: 300 nm

Area: 20 x 20 mm2

Substrate: Si 20 x 20 mm2

Pattern 4

Hexagonal hole array

Period: 600 nm

Diameter: 300 nm

Height: 50 nm, 450 nm

Area: 20 x 20 mm2

Substrate: Si 20 x 20 mm2

Pattern 5

Hexagonal hole array

Period: 600 nm

Diameter: 400 nm

Height: 680 nm

Area: 20 x 20 mm2

Substrate: Si 20 x 20 mm2

Pattern 14

Hole array on Rhombic lattice

Period:* x=610nm, y=425nm

Diameter: 150 nm

Height: 300 nm

Area: 20 x 20 mm2

Chip size: Si 24 x 24 mm2

* center-to-center distance in x and y

Pattern 16

Hexagonal hole array

Period: 750 nm

Diameter: 380 nm

Height: 420 nm

Area: 25 x 25 mm2

Substrate: Si 25 x 25 mm2

Pattern 18

Hexagonal hole array

Period: 1010 nm

Diameter: 490 nm

Height: 470 nm

Area: 25 x 25 mm2

Substrate: Si (1mm) 25 x 25 mm2

Pattern 19

Hexagonal hole array

Period: 1500 nm

Diameter: 780 nm

Height: 550 nm

Area: 25 x 25 mm2

Substrate: Si (1mm) 25 x 25 mm2

Pattern 21

Hexagonal hole array

Period: 3000 nm

Diameter: 1500 nm

Height: 850 nm

Area: 20 x 20 mm2

Substrate: Si 25 x 25 mm2

Pattern 22

Hexagonal hole array

Period: 3000 nm

Diameter: 1200 nm

Height: 1500 nm

Area: 20 x 20 mm2

Substrate: Si 25 x 25 mm2

2x2cm2标准纳米压印模板

我们提供电子束光刻方法制备的硅模板,衬底尺寸为20x20mm2。图形分辨率高,有效区域为5x5mm2。批量生产,且性价比高。

产品精度:

  • 标准高度:100nm

  • 直径: ±10%

  • 线宽: ±10%

  • 缺陷面积:< 1%

具体规格如下表所示:

孔阵(矩形孔阵)

序号ProductPeriodAreaDiameter / Height
1P100s_h_5w5100nm5x5mm250nm/ 100nm
2P150s_h_5w5150nm5x5mm260nm/ 100nm
3P200s_h_5w5200nm5x5mm270nm/ 100nm

孔阵(六边形孔阵)

序号ProductPeriodAreaDiameter / Height
1P200h_h_5w5200nm5x5mm280nm/ 100nm
2P300h_h_5w5300nm5x5mm2125nm/ 100nm
3P400h_h_5w5400nm5x5mm2150nm/ 100nm

柱状点阵(矩形柱状点阵)

序号ProductPeriodAreaDiameter / Height
1P100s_p_5w5100nm5x5mm250nm/ 100nm
2P150s_p_5w5150nm5x5mm260nm/ 100nm
3P200s_p_5w5200nm5x5mm280nm/ 100nm

柱状点阵(六边形柱状点阵)

序号ProductPeriodAreaDiameter / Height
1P200h_p_5w5200nm5x5mm270nm/ 100nm
2P300h_p_5w5300nm5x5mm2110nm/ 100nm
3P400h_p_5w5400nm5x5mm2120nm/ 100nm

大面积四英寸模板

我们提供四英寸硅或石英模板,可用于压印工艺。批量生产制作且性价比高。

产品精度:

  • 高度/深度:±15%

  • 直径:±10%

  • 线宽:±10%

  • 缺陷面积:<1%

具体规格如下表所示:

Holes on Hexagonal Lattice(六边形孔阵)

Part NoProductPeriodDiameterAreaMax. Etch depth (Si/Quartz)Image
1P520h_h_20w20520 nm260nm20x20 mm2450 nm/200 nm
2P600h_h_46w46600 nm300nm46x46 mm2450 nm/200 nm
3P600h_h_100d600 nm300nm4-inch450 nm/200 nm
4P750h_h_51w51750 nm350nm51x51 mm2450 nm/200 nm
5P780h_h_20w20780 nm350nm20x20 mm2450 nm/200 nm
6P1000h_h_20w201000 nm400nm20x20 mm2600 nm/300 nm
7P1000h_h_51w511000 nm300nm~

500nm

51x51 mm2600 nm/300 nm
8P1500h_h_20w201500 nm400nm~

650nm

20x20 mm2600 nm/300 nm
9P1500h_h_51w511500 nm400nm~

650nm

51x51 mm2600 nm/300 nm
10P3000h_h_100d3000 nm600nm~

1400nm

4-inch1000 nm/400 nm

Holes on Square Lattice(矩形孔阵)

Part NoProductPeriodDiameterAreaMax. Etch depth (Si/Quartz)Image
11P350s_h_20w20350 nm250nm20x20 mm2300 nm/150 nm
12P350s_h_100d350 nm250nm100dia300 nm/150 nm

Pillars on Hexagonal Lattice(六边形柱状)

Part NoProductPeriodDiameterAreaMax. Etch depth (Si/Quartz)Image
13P600h_p_46w46600 nm300nm46x46 mm2450 nm/200 nm
14P600h_p_100d600 nm300nm4-inch450 nm/200 nm
15P750h_p_51w51750 nm350nm51x51 mm2450 nm/200 nm
16P780h_p_20w20780 nm350nm20x20 mm2450 nm/200 nm
17P1000h_p_20w201000 nm400nm20x20 mm2600 nm/300 nm
18P1000h_p_51w511000 nm300nm~

500nm

51x51 mm2600 nm/300 nm
19P1500h_p_20w201500 nm400nm~

650nm

20x20 mm2600 nm/300 nm
20P1500h_p_51w511500 nm400nm~

650nm

51x51 mm2600 nm/300 nm
21P3000h_p_100d3000 nm600nm~

1400nm

4-inch1000 nm/400 nm

Pillars on Square Lattice(矩形柱状点阵)

Part NoProductPeriodDiameterAreaMax. Etch depth (Si/Quartz)Image
22P150s_p_30w30150 nm75nm30x30 mm275 nm/ —
23P250s_p_30w30250 nm110nm30x30 mm2200 nm/100 nm
24P300s_p_30w30300 nm130nm30x30 mm2200 nm/100 nm
25P400s_p_30w31400nm250nm30x30 mm3200 nm/100 nm
26P500s_p_30w30500 nm250nm30x30 mm2450 nm/200 nm

Linear Gratings(光栅结构)

Part NoProductPeriodWidthAreaMax. Etch depth (Si/Quartz)Image
27P150L_p_30w30150nm70nm30x30 mm275 nm/ —
28P250L_p_30w30250nm110nm30x30 mm2200 nm/100 nm
29P300L_p_30w30300nm130nm30x30 mm2200 nm/100 nm
30P400L_p_30w30400nm200nm30x30 mm2200 nm/100 nm
31P500L_p_30w30500nm250nm30x30 mm2450 nm/200 nm

Multi-pattern(复合结构)

Part NoProductDescriptionDiameterPeriodAreaMax. Etch depth (Si/Quartz)
32MHSL_400-800Linear, hexagonal, square array combination,

Periods: 400-800nm

pitch dependentho, les/

lines

each period,7.5mm x 7.5mm400 nm/150 nm
33MP250L300Multi-period linear grating combination 1,

Periods: 250nm, 275nm, 300nm

Linewidth(+/15nm): 90/250 100/275 120/300lineseach period,7mm x 7mm200 nm/100 nm
34MP300L600Multi-period linear grating combination 2,

Periods: 300nm, 400nm, 500nm, 600nm

Linewidth(+/15nm): 90/250 100/275 120/300lineseach period,10mm x 10mm300 nm/150 nm
相关产品
我要咨询关闭
  • 姓名* 
  • 电话* 
  • 单位* 
  • email*
  • 留言内容:*
  • 验证码*  
  • 让更多商家关注