氧化镓(III)

Gallium(III) oxide
CAS NO:12024-21-4
规格:,4N,5N,4N,99.99%,SP
包装规格:5g,25g,1g,100g,500g,10 G,50 G,50g,5克,25克,100克,1克
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产品价格
产品编号品牌纯度规格包装单位单价(元)现货
3049292Alfa Aesar99.99% (metals basis)5g1144请咨询
3049292Alfa Aesar99.99% (metals basis)25g4070请咨询
3049293Alfa Aesar99.99% (metals basis)1g916请咨询
3049293Alfa Aesar99.99% (metals basis)5g3170请咨询
3049293Alfa Aesar99.99% (metals basis)25g12250请咨询
3049294Alfa Aesar99.99% (metals basis)5g1880请咨询
3049294Alfa Aesar99.99% (metals basis)25g6220请咨询
3049294Alfa Aesar99.99% (metals basis)100g17310请咨询
3049295Alfa Aesar99.99% (metals basis)5g1041请咨询
3049295Alfa Aesar99.99% (metals basis)25g2330请咨询
3049295Alfa Aesar99.99% (metals basis)100g7630请咨询
3049296Alfa Aesar99.99% (metals basis)5g1170请咨询
3049296Alfa Aesar99.99% (metals basis)25g3980请咨询
3049296Alfa Aesar99.99% (metals basis)100g8850请咨询
3049296Alfa Aesar99.99% (metals basis)500g31860请咨询
3089950Sigma-Aldrich99.99% (metals basis)10 G1980请咨询
3089950Sigma-Aldrich99.99% (metals basis)50 G4490请咨询
3469873翁江4N25g450请咨询
3469873翁江4N100g1006请咨询
3469873翁江4N500g2610请咨询
3477392Alfa Aesar99.99% (metals basis)5g1430请咨询
3477392Alfa Aesar99.99% (metals basis)50g7960请咨询
34849755N1g344
3487360Ryon4N,99.99%5克126请咨询
3487360Ryon4N,99.99%25克504请咨询
3487360Ryon4N,99.99%100克1730请咨询
3487360RyonSP1克862请咨询
3507474J&K99.99% (metals basis)5G451请咨询
3507474J&K99.99% (metals basis)25G1650请咨询
3548292Strem99.99% (metals basis)5g831请咨询
3548292Strem99.99% (metals basis)25g2760请咨询
3548292Strem99.99% (metals basis)100g7570请咨询
4005136TCI99.99% (metals basis)5G348请咨询
4005136TCI99.99% (metals basis)25G1138请咨询
结构式
基本信息
应用
In spectroscopic analysisGallium(III) oxide is used in vacuum deposition. It is useful for making semiconductor devices, gallium-alumina catalyst, gas sensors, luminescent phosphors and dielectric coatings of solar cells. Used as an evaporated material and sputtering target of 99.999% in dielectric films. It shows potential for developing deep-ultraviolet TCOs (Transparent Conductive Oxides) and transparent electrodes for ultraviolet optoelectronic devices. Recent studies report that gallium oxide can be a strong contender for power electronic devices for example in ultrahigh-voltage power switching applications. Films made of gallium oxide have gained commercial interest owing to their gas sensitive characteristics, and glasses made with gallium oxide are the preferred optical materials for use in advanced technologies.
备注
Reacts violently with Mg on heating and reduces to metallic GaStored in cool, well ventilated area. Container must be tightly closed.
MDL
MFCD00011020
EINECS
234-691-7
分子式
Ga2O3
分子量
187.44
熔点
1900°
密度
6.44
折射率
1.92
灵敏度
Ambient temperatures.
形态
-50 Mesh Powder
溶解性
Insoluble in water. Soluble in alkalies. Very slightly soluble in hot acids.
Merck
14,4346
安全信息
TSCA
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